1EDI20N12AF
1200 V, 4 A single-channel gate driver with separate output and short circuit clamping
EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A output current in DSO-8 narrow package with 4 mm creepage. 1EDI20N12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). The driver can operate over a wide supply voltage range, either unipolar or bipolar. For new designs, please check out the latest pin-2-pin EiceDRIVER™ X3 Compact 1ED3140MU12F.
Summary of Features
- EiceDRIVER™ Compact single channel isolated gate driver family
- For 600 V, 650 V, 950 V MOSFETs
- Galvanically isolated coreless transformer gate driver
- 4 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- 120 ns propagation delay with 40 ns input filter
- High common-mode transient immunity CMTI >100 kV/μs
- Separate source and sink outputs
- Short-circuit clamping and active shutdown
- DSO-8 150 mil narrow-body package with 4 mm creepage distance
- 8 V/10 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
- Tailored for all 650 V CoolMOS™ C7, P6 and other super junction MOS transistors
- High switching frequency applications as SMPS, up to 4 MHz
- Integrated filters reduce the need of external filters
- Suitable for operation at high ambient temperature and in fast switching applications
- No need to adapt signal voltage levels between μController and driver
- Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
- Short-circuit clamping to limit the gate voltage during short circuit
Applications
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Designers who used this product also designed with
| Parametrics | 1EDI20N12AF |
|---|---|
| Channels | 1 |
| Configuration | High-side |
| Input Vcc min max | 3.1 V 17 V |
| Isolation Type | Galvanic isolation - Functional |
| Output Current (Source) | 4 A |
| Output Current (Sink) | 3.5 A |
| Qualification | Industrial |
| Turn Off Propagation Delay | 120 ns |
| Turn On Propagation Delay | 115 ns |
| VBS UVLO (Off) | 8.5 V |
| VBS UVLO (On) | 9.1 V |
| VCC UVLO (Off) | 2.75 V |
| VCC UVLO (On) | 2.85 V |
| Voltage Class | 1200 V |
| Parametrics | 1EDI20N12AF |
|---|
Login to myInfineon to see all documents available
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1EDI20N12AF
EN
01_10 | 2023-06-23 | pdf | 668 KB
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Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
EN
JA
01_01 | 2024-11-20 | pdf | 376 KB
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Advanced gate drive options for silicon carbide (SiC) MOSFETs using EiceDRIVER
EN
CN
01_02 | 2024-04-12 | pdf | 836 KB
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Evaluation board EVAL_800W_PSU_4P_C7 with 600V CoolMOS™ C7 and XMC™
EN
02_00 | 2023-11-17 | pdf | 7.2 MB
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Advantages of coreless-transformer gate drivers over gate drive optocouplers
EN
01_01 | 2022-04-26 | pdf | 1.8 MB
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MOSFET 閘極驅動器的 PCB 佈局指南
CN
01_00 | 2018-04-09 | pdf | 1.9 MB
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MOSFET gate driver PCB layout guidelines
EN
CN
01_00 | 2018-02-26 | pdf | 1.4 MB
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AN2014-06 1EDC/1EDI Compact family technical description
EN
01_03 | 2017-07-19 | pdf | 252 KB
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EiceDRIVER™ Gate resistor for power devices
EN
JA
01_00 | 2015-12-17 | pdf | 691 KB
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External Booster for Driver IC
EN
CN
01_06 | 2014-08-05 | pdf | 705 KB
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Obtaining information about junction temperature by using the thermal coefficient
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CN
02_00 | 2013-10-30 | pdf | 318 KB
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1EDI20N12AF
EN
01_00 | 2024-06-05 | pdf | 176 KB
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FIT Report - 1EDI20N12AF
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06_00 | 2025-03-12 | pdf | 24 KB
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Infineon-MA005561804-MaterialContentSheet-v01_00-EN
EN
01_00 | 2021-06-25 | pdf | 93 KB
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Infineon-MA001245990-MaterialContentSheet-v01_00-EN
EN
01_00 | 2021-05-05 | pdf | 93 KB
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A New Gate Driver IC Family that Fits All - Article in Power Electronics Europe Issue 3 2014
EN
CN
01_00 | 2014-05-14 | pdf | 196 KB
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1ED EiceDRIVER™ Compact - A new high performance, cost efficient, high voltage gate driver IC family
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CN
2014-05-26 | pdf | 1.1 MB
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Infineon EiceDRIVER™ gate driver ICs selection guide
EN
CN
02_00 | 2022-05-04 | pdf | 13 MB
| Sales Product Name | 1EDI20N12AF |
|---|---|
| OPN Info | 1EDI20N12AFXUMA1 |
| Product Status | active |
| Infineon Package name | PG-DSO-8 |
| Standard Package name | |
| Order online | |
| Completely lead free | yes |
| Halogen free | yes |
| RoHS compliant | yes |
| Packing Size | 2500 |
| Packing Type | TAPE & REEL |
| Moisture Level | 3 |
| Moisture Packing | DRY |
| Sales Product Name | 1EDI20N12AF |
|---|
Boards & Designs
EVAL_500W_5G_PSU
EVAL_HB_PARALLELGAN
EVAL_2500W_PFC_GAN_A
EVAL_3K6W_LLC_GAN
EVAL_1K6W_PSU_G7_DD
EVAL_800W_PSU_3P_P7
EVAL_800W_PSU_4P_C7
PCB Design Data
Simulation Models
Simulation Tools
Simulate ONLINE - 1200 V, 4 A single-channel gate driver IC EiceDRIVER™ 1EDI20N12AF with separate output and short circuit clamping
DOWNLOAD - InfineonSpice Desktop Circuit Simulator
Services
Infineon Academy learning platform
Infineon Developer Community - Gate Driver ICs
EVAL_500W_5G_PSU
EVAL_HB_PARALLELGAN
EVAL_2500W_PFC_GAN_A
EVAL_3K6W_LLC_GAN
EVAL_1K6W_PSU_G7_DD
EVAL_800W_PSU_3P_P7
EVAL_800W_PSU_4P_C7
Simulate ONLINE - 1200 V, 4 A single-channel gate driver IC EiceDRIVER™ 1EDI20N12AF with separate output and short circuit clamping
DOWNLOAD - InfineonSpice Desktop Circuit Simulator
Infineon Academy learning platform
Infineon Developer Community - Gate Driver ICs
How to make gate driver designs simple
Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!
- EiceDRIVER™ 1ED Compact now including X3 Compact family (1ED31xx), with up to 14 A output current, 200 kV/µs CMTI
- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
How to choose gate driver for IGBT discretes and modules
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
How to choose gate driver for SiC MOSFETs and SiC MOSFET modules
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
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PG-DSO-8-51 | 1EDI20N12AFXUMA1
EN
01_00 | 2016-04-11 | pdf | 727 KB
